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STF19NM50N STP19NM50N, STW19NM50N N-channel 500 V, 0.2 , 14 A MDmeshTM II Power MOSFET in TO-220FP, TO-220 and TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 STF19NM50N 2 3 2 1 STP19NM50N 550 V < 0.25 14 A 1 TO-247 STW19NM50N TO-220 100% avalanche tested Low input capacitances and gate charge 3 2 1 Low gate input resistance TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description This second generation of MDmeshTM technology, applies the benefits of the multiple drain process to STMicroelectronics' well-known PowerMESHTM horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. Table 1. Device summary Order codes Marking Package Packaging STF19NM50N TO-220FP STP19NM50N 19NM50N TO-220 Tube STW19NM50N TO-247 February 2010 Doc ID 17079 Rev 1 1/15 www.st.com 15 Contents STF19NM50N, STP19NM50N, STW19NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .